 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prufspannung insulation test voltage tP = 1 ms TC = 80C TC = 25 C tP = 1 ms, TC = 80C VCES 1200 V IC,nom. IC ICRM 800 1200 1600 A A A TC=25C, Transistor Ptot 6,9 kW VGES +/- 20V V IF 800 A IFRM 1600 A VR = 0V, tp = 10ms, TVj = 125C 2 It 185.000 A2s RMS, f = 50 Hz, t = 1 min. VISOL 2.500 V Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannunggate threshold voltage Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Gateladung gate charge Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 800 A, VGE = 15V, Tvj = 25C IC = 800 A, VGE = 15V, Tvj = 125C IC = 32 mA, VCE = VGE, Tvj = 25C VGE(th) VCE sat min. 4,5 typ. 3,00 3,60 5,5 max. 6,5 V V V f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cies - 52 - nF f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cres - t.b.d. - nF VGE = -15V ... + 15V, VCE = 600V VCE = 1200V, VGE = 0V, Tvj = 25C VCE = 1200V, VGE = 0V, Tvj = 125C VCE = 0V, VGE = 20V, Tvj = 25C QG ICES - 8,4 t.b.d. t.b.d. - 400 C A mA nA IGES - prepared by: R. Jorke approved by: Jens Thurau date of publication : 2000-06-14 revision: 1 1 (9) FZ800R12KS4, preliminary.xls 15.06.00 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 800 A, VCC = 600V VGE = 15V, RG = 1,3 , Tvj = 25C VGE = 15V, RG = 1,3 , Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 800 A, VCC = 600V VGE = 15V, RG = 1,3 , Tvj = 25C VGE = 15V, RG = 1,3 , Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 800 A, VCC = 600V VGE = 15V, RG = 1,3 , Tvj = 25C VGE = 15V, RG = 1,3 , Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 800 A, VCC = 600V VGE = 15V, RG = 1,3 , Tvj = 25C VGE = 15V, RG = 1,3 , Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul-Leitungswiderstand, Anschlusse - Chip lead resistance, terminals - chip IC = 800 A, VCC = 600V, VGE = 15V RG = 1,3 , Tvj = 125C, LS = 60nH IC = 800 A, VCC = 600V, VGE = 15V RG = 1,3 , Tvj = 125C, LS = 60nH tP 10sec, VGE 15V TVj125C, VCC= 900V, VCEmax=VCES -LsCE *dI/dt ISC LsCE 6000 12 A nH Eoff 64 mWs Eon 76 mWs tf 60 70 ns ns td,off 530 590 ns ns tr 90 100 ns ns td,on 100 125 ns ns min. typ. max. RCC'+EE' - t.b.d. - m Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 800 A, VGE = 0V, Tvj = 25C IF = 800 A, VGE = 0V, Tvj = 125C IF = 800 A, - diF/dt = 8200 A/sec VR = 600V, VGE = -10V, Tvj = 25C VR = 600V, VGE = -10V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 800 A, - diF/dt = 8200 A/sec VR = 600V, VGE = -10V, Tvj = 25C VR = 600V, VGE = -10V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 800 A, - diF/dt = 8200 A/sec VR = 600V, VGE = -10V, Tvj = 25C VR = 600V, VGE = -10V, Tvj = 125C Erec 32 76 mWs mWs Qr 60 160 As As IRM 540 900 A A VF min. - typ. 2,00 1,70 max. V V 2 (9) FZ800R12KS4, preliminary.xls 15.06.00 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K RthCK RthJC - typ. 0,008 max. 0,018 0,027 K/W K/W K/W Tvj - - 150 C Top -40 - 125 C Tstg -40 - 150 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Material Modulgrundplatte material of module baseplate Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight terminals M4 terminals M8 G M1 4,25 Cu AlN 32,2 mm 19,1 mm > 400 5,75 Nm M2 1,7 8 1000 2,3 10,00 Nm Nm g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (9) FZ800R12KS4, preliminary.xls 15.06.00 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (VCE) VGE = 15V 1600 1400 T = 25C 1200 1000 T = 125C IC [A] 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 1600 1400 VGE = 8V I C = f (VCE) Tvj = 125C 1200 1000 VGE = 9V VGE = 10V VGE = 12V VGE = 15V VGE = 20V IC [A] 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 VCE [V] 4 (9) FZ800R12KS4, preliminary.xls 15.06.00 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C = f (VGE) VCE = 20V 1600 1400 1200 1000 T = 25C T = 125C IC [A] 800 600 400 200 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 1600 1400 1200 1000 Tj = 25C Tj = 125C I F = f (VF) IF [A] 800 600 400 200 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 VF [V] 5 (9) FZ800R12KS4, preliminary.xls 15.06.00 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Schaltverluste (typisch) Switching losses (typical) E on = f (IC) , E off = f (IC) , E rec = f (IC) RG,on = 1,3 , RG,off = 1,3 , VCE = 600V, Tj = 125C 250,0 Eon Eoff 200,0 Erec E [mJ] 150,0 100,0 50,0 0,0 0 200 400 600 800 1000 1200 1400 1600 IC [A] Schaltverluste (typisch) Switching losses (typical) 450 400 350 300 E [mJ] 250 200 150 100 50 0 0 1 2 3 Eon Eoff Erec E on = f (RG) , E off = f (RG) , E rec = f (RG) IC = 800 A , VCE = 600V , Tj = 125C 4 5 6 7 8 RG [] 6 (9) FZ800R12KS4, preliminary.xls 15.06.00 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Sicherer Arbeitsbereich IGBT (RBSOA) Reverse bias safe operation area IGBT (RBSOA) 1800 RG,off = 1,3 , Tvj= 125C 1600 IC [A] 1400 1200 1000 800 IC,Modul IC,Chip 600 400 200 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7 (9) FZ800R12KS4, preliminary.xls 15.06.00 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Transienter Warmewiderstand Transient thermal impedance 0,1 Z thJC = f (t) Zth:IGBT Zth:Diode 0,01 ZthJC [K / W] 0,001 0,0001 0,001 0,01 0,1 1 10 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 3,85 0,0064 5,78 0,0064 2 5,68 0,0493 8,52 0,0493 3 6,15 0,0916 9,22 0,0916 4 2,32 1,5237 3,48 1,5237 8 (9) FZ800R12KS4, preliminary.xls 15.06.00 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorlaufige Daten Preliminary data Gehausemae / Schaltbild Package outline / Circuit diagram 9 (9) FZ800R12KS4, preliminary.xls 15.06.00 |
Price & Availability of FZ800R12KS4
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |